论文部分内容阅读
利用BeamPropagationMethod（BPM）方法研究了深亚微米同步辐射X射线光刻中的掩模吸收体的光导波效应，并且利用瑞利-索末非理论对光刻胶表面的空间像光强分布进行了计算。研究结果表明基尔霍夫边界条件不宜用于计算0.25μm以下光刻分辨率的空间像光强分布。研究结果还表明北京同步辐射装置3BlA光刻束线的光刻分辨率可以达到0．1μm，而且这时金吸收体厚度为0．45μm就可以了，而不是通常认为的1．0μm。
The photoconductive wave effect of the mask absorber in deep sub-micron synchrotron radiation X-ray lithography was studied by using the Beam Propagation Method (BPM) method. The spatial light intensity distribution of the photoresist surface was studied by Rayleigh- Calculate. The results show that Kirchhoff’s boundary conditions should not be used to calculate the spatial light intensity distribution of lithography resolution below 0.25μm. The results also show that the lithography resolution of the 3BlA lithography beam in Beijing synchrotron radiation device can reach 0.1μm, and the thickness of the gold absorber can be 0.45μm instead of 1.0μm.