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采用超低压(22×10~2Pa)选择区域生长(selective area growth,SAG)金属有机化学气相沉积(metal-organic chemicalvapor deposition,MOCVD)技术成功制备了应变型InGaAsP/InGaAsP电吸收调制器(electroabsorption modulator,EAM)与分布反馈激光器(distribute feedbacklaser,DFB)单片集成光源的新型光电器件.实验结果表明,采用该技术制备的集成器件表现出了良好的性能:激射阈值为19mA,出光功率接近7mW,边模抑制比(side-mode suppressionratio,SMSR)大于40dB,将该集成器件出射光耦合进普通单模光纤后进行测量,获得了16dB的消光比,器件3dB响应带宽达到了10GHz以上.将该集成器件完全封装后成功进行了10Gb/s非归零码(non-returnzero,NRZ)的传输实验:在误码率为10~(-10)的传输条件下于普通单模光纤中传输了53.3km,色散代价小于1.5dB,动态消光比大于8dB,且眼图清晰张开.
The strained InGaAsP / InGaAsP electroabsorption modulator (MESVD) was successfully fabricated by ultra-low pressure (22 × 10 ~ 2Pa) selective area growth (SAG) metalorganic chemical vapor deposition (MOCVD) , EAM) and distributed feedback lasers (DFB). The experimental results show that the integrated device fabricated by this technique shows good performance: the lasing threshold is 19mA, the output power is close to 7mW , The side-mode suppression ratio (SMSR) is greater than 40dB, and the exiting light of the integrated device is coupled into the ordinary single-mode optical fiber to obtain the extinction ratio of 16dB, and the response bandwidth of the device 3dB reaches above 10GHz. After the integrated device was fully encapsulated, a 10Gb / s non-returnzero (NRZ) transmission experiment was successfully performed: 53.3 was transmitted in ordinary single-mode optical fiber under the transmission error rate of 10 ~ (-10) km, the dispersion cost is less than 1.5dB, the dynamic extinction ratio is more than 8dB, and the eye diagram is clearly opened.