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高功率阵列半导体激光器已得到广泛应用,对其质量和可靠性进行无损检测很有必要。在导数测试技术中,参数h是电导数曲线阈值处的下沉高度,参数Q是二阶光导数曲线阈值处的峰的高宽比。对导数测试参数h,Q与阵列激光器的单元器件的质量和均匀性进行了研究。基于其等效电路在一定条件下,计算了阵列激光器的均匀性对h的影响。并对实际阵列器件进行了导数测试。理论和实验结果对比表明,h,Q等参数是组成阵列的各管芯的均匀性的灵敏参数。
High-power array semiconductor lasers have become widely used, and it is necessary to conduct non-destructive testing of their quality and reliability. In the derivative test technique, parameter h is the sinking height at the threshold of the conductance curve and parameter Q is the aspect ratio of the peak at the threshold of the second-order light derivative curve. The quality and uniformity of the unit components of derivative test parameters h, Q and array lasers were investigated. Based on the equivalent circuit, under certain conditions, the influence of the uniformity of the array laser on h is calculated. And the actual array device derivative test. A comparison of theoretical and experimental results shows that h, Q and other parameters are sensitive parameters of the uniformity of the individual dies that make up the array.