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1997年超大规模集成电路技术研讨会于6月10～12日在日本京都召开,与会者545人。会上发表论文74篇。在互连技术方面,人们仍然追求多层结构、低接触电阻和高可靠性。所用的材料有Mn_2O_3,Wsi_X,Cu和Al等。其中最为典型的是用于亚0.3μm CMOS工艺中的五层互连技术。在薄栅氧化层和栅MOS工艺方面,高可靠性的薄氧化层、氮化层和氮氧化层形成的性质受到重视,人们的注意力主要集中在用这些薄栅绝缘层去克服由于尺寸缩小带来的不良影响。Cosi_2有望在深亚微米工艺中得到有效的应用,这与它的低接触电阻率和高的可靠性有关。
1997 VLSI Symposium was held in Kyoto, Japan from June 10 to June 12, with 545 participants. 74 papers were published at the conference. In the field of interconnection technology, people still pursue multi-layer structure, low contact resistance and high reliability. The materials used are Mn_2O_3, Wsi_X, Cu and Al. The most typical of these are the five-layer interconnect technology used in sub-0.3μm CMOS processes. In thin gate oxide and gate MOS processes, the formation of highly reliable thin oxide, nitride and oxynitride layers has received much attention and much attention has been focused on the use of these thin gate insulating layers to overcome the problems of reduced size The adverse effects. Cosi_2 is expected to be effectively used in deep sub-micron processes, due to its low contact resistivity and high reliability.