掺In半绝缘GaAs衬底上外延GaAs的晶格失配研究

• 作 者: 杨保华 王玉田 李成基 何宏家 王占国 林兰英
• 机 构: 中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所 北京,北京,北京,北京,北京,北京
• 出 处: 半导体学报
• 发表日期: 1989年02期
• 关键词: In 半绝缘 衬底 LPE 晶格失配 等电子杂质 外延层 失配位错 汽相外延生长 表面形貌

本文报道了在掺In半绝缘GaAs衬底上的液相和汽相外延生长,并用x射线双晶衍射和光学显微等方法研究外延层和衬底之间的晶格失配.结果表明,当衬底中In组分x<0.004时,外延层失配应力主要由弹性形变调节,不出现失配位错,并可得到很好的表面形貌;当x≥0.006时,外延层产生失配位错,失配应力主要由失配位错调节,液相外延层表面出现沿[110]和[110]方向的十字网络.当外延层产生范性形变时衬底中的临界In组分x_c在0.004和0.006之间.

In this paper, the liquid-phase and vapor-phase epitaxial growth on GaAs-doped semi-insulating GaAs substrates has been reported. The lattice mismatch between the epitaxial layer and the substrate has been investigated by X-ray double crystal diffraction and optical microscopy. When the In composition of the substrate is less than 0.004, the mismatch stress of the epitaxial layer is mainly controlled by the elastic deformation without misfit dislocation, and a good surface morphology can be obtained. When x≥0.006, the epitaxial layer produces loss Misfit stress is mainly controlled by mismatch dislocation, and a cross network along [110] and [110] directions appears on the surface of the liquid crystal epitaxial layer. When the epitaxial layer is undergoing a normal deformation, the critical In component x_c is between 0.004 and 0.006.