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在对SiGeHBT(异质结双极晶体管)载流子输运的研究基础上,建立了包括基区扩展效应SiGeHBT发射极延迟时间τe模型.发射极延迟时间与发射结势垒电容和集电结势垒电容密切相关.在正偏情况下,通常采用的势垒区耗尽层近似不再适用,此时需要考虑可动载流子的影响.本文重点分析了电流密度及发射结面积等参数对SiGeHBT发射极延迟时间的影响.
Based on the study of carrier transport in SiGeHBT (Heterojunction Bipolar Transistor), a model of delay time τe of SiGeHBT emitter including base extension effect is established. The emitter delay time, emitter junction barrier capacitance and collector junction Barrier capacitance is closely related.In the case of positive bias, the commonly used barrier region depletion layer approximation is no longer applicable, this time need to consider the impact of movable carriers.This paper focuses on the analysis of the current density and emitter junction area and other parameters Effect on SiGeHBT emitter delay time.