Electroplated indium bump arrays and the bonding reliability

• 作 者: 黄秋平 徐高卫 全刚 袁媛 罗乐
• 机 构: State Key Laboratories of Transducer Technology,Shanghai Institute of Microsystem and Information Te
• 出 处: 半导体学报
• 发表日期: 2010年11期
• 关键词: indium reflow bonding uniformity slowly pitch evaporation texture solder oscilla

A novel electroplating indium bumping process is described,as a result of which indium bump arrays with a pitch of 100μm and a diameter of 40μm were successfully prepared.UBM(under bump metallization) for indium bumping was investigated with an XRD technique.The experimental results indicate that Ti/Pt(300(?)/200(?)) has an excellent barrier effect both at room temperature and at 200℃.The bonding reliability of the indium bumps was evaluated by a shear test.Results show that the shear strength of the indium bump significantly increases after the first reflow and then changes slowly with increasing reflow times.Such a phenomenon may be caused by the change in textures of the indium after reflow.The corresponding flip-chip process is also discussed in this paper.

A novel electroplating indium bumping process is described, as a result of which indium bump arrays with a pitch of 100 μm and a diameter of 40 μm were successfully prepared .UBM (under bump metallization) for indium bumping was investigated with an XRD technique. indicate that the Ti / Pt (300 (?) / 200 (?)) has an excellent barrier effect both at room temperature and at 200 ° C .; The bonding reliability of the indium bumps was evaluated by a shear test. Results show that the shear strength of the indium bump statistically increases after the first reflow and then changes slowly with increasing reflow times .uch a phenomenon may be caused by the change in textures of the indium after reflow.The corresponding flip-chip process is also discussed in this paper.