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Self-organized In 0.5 Ga 0.5 As/GaAs quantum island structure emitting at 1.35 μm at room temperature has been successfully fabricated by molecular beam epitaxy (MBE) via cycled (InAs) 1/(GaAs) 1 monolayer deposition method. Photoluminescence (PL) measurement shows that very narrow PL linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In 0.5 Ga 0.5 As islands structure. Our results provide important information for optimizing the epitaxial structures of 1.3 μm wavelength quantum dot (QD) devices.
Self-organized In 0.5 Ga 0.5 As / GaAs quantum island structure emitting at 1.35 μm at room temperature has been successfully fabricated by molecular beam epitaxy (MBE) via cycled (InAs) 1 / (GaAs) 1 monolayer deposition method. Photoluminescence (PL) measurement shows that very narrow PL linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In 0.5 Ga 0.5 As islands structure. Our results provide important information for optimizing the epitaxial structures of 1.3 μm wavelength quantum dot (QD) devices.