Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and

• 作 者: 王建禄 胡伟达
• 机 构: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
• 出 处: Chinese Physics B
• 发表日期: 2017年03期
• 关键词: ferroelectric dielectric transistor junction fabricating integrating photodetect

Two-dimensional(2D) materials, such as graphene and Mo S2 related transition metal dichalcogenides(TMDC), have attracted much attention for their potential applications. Ferroelectrics, one of the special and traditional dielectric materials,possess a spontaneous electric polarization that can be reversed by the application of an external electric field. In recent years, a new type of device, combining 2D materials with ferroelectrics, has been fabricated. Many novel devices have been fabricated, such as low power consumption memory devices, highly sensitive photo-transistors, etc. using this technique of hybrid systems incorporating ferroelectrics and 2D materials. This paper reviews two types of devices based on field effect transistor(FET) structures with ferroelectric gate dielectric construction(termed Fe FET). One type of device is for logic applications, such as a graphene and TMDC Fe FET for fabricating memory units. Another device is for optoelectric applications, such as high performance phototransistors using a graphene p-n junction. Finally, we discuss the prospects for future applications of 2D material Fe FET.

Two-dimensional (2D) materials, such as graphene and Mo S2 related transition metal dichalcogenides (TMDC), have attracted much attention for their potential applications. Ferroelectrics, one of the special and traditional dielectric materials, possess a spontaneous electric polarization that can be by the application of an external electric field. In recent years, a new type of device, combining 2D materials with ferroelectrics, has been fabricated. Many novel devices have been fabricated, such as low power consumption memory devices, highly sensitive photo-transistors , etc. using this technique of hybrid systems incorporating ferroelectrics and 2D materials. This paper reviews two types of devices based on field effect transistors (FET) structures with ferroelectric gate dielectric construction (termed Fe FETs). One type of device is for logic applications , such as a graphene and TMDC Fe FETs for fabricating memory units. Another device is for optoelectric applications, such as high performance phototransistors using a graphene p-n junction. Finally, we discuss the prospects for future applications of 2D material Fe FETs.