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抛光是半导本器件生产中的关键基本工艺之一。在现用的硅片抛光工艺中,公认以NaOH为化学介质的SiO_2胶体或悬浮液抛光,比铬离子抛光的表面要好,已被普遍应用。但其美中不足的是抛光液中有大量Na~+离子存在,抛光速度也不够快,这都是我们所不希望的。 为此,我们首先对现行使用的SiO_2胶体抛光机理进行了初步探讨,然后按此机理,考虑以有机胺代替一般SiO_2胶体抛光液中的NaOH,做了一些实验,得到的结果表明是较满意的。本文就上述有关问题,谈一点初步看法。
Polishing is one of the key basic processes in the production of semiconductors. In the current silicon polishing process, it is generally accepted that SiO 2 colloids or suspensions with NaOH as the chemical medium are polished better than the surfaces polished with chromium ions and have been widely used. However, the fly in the ointment is that there is a large amount of Na + ions in the polishing solution and the polishing speed is not fast enough, which is not what we want. To this end, we first conducted a preliminary study of the current mechanism of the use of SiO 2 colloid polishing, and then press this mechanism to consider the organic amine instead of general SiO_2 colloidal polishing solution of NaOH, do some experiments, the results obtained are more satisfactory . This article on the above issues, to talk about some preliminary views.