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报道了在钙钛矿型结构的 Ｓｒ Ｔｉ Ｏ３ 衬底上用分子束外延方法生长闪锌矿型结构的 Ｇａ Ａｓ半导体单晶薄膜．应用光调制反射光谱和光荧光方法 ，研究了 Ｇａ Ａｓ 半导体薄膜的带间跃迁，并与通常的 Ｇａ Ａｓ 体材料特性进行了对比研究．结果表明，在钙钛矿型结构 Ｓｒ Ｔｉ Ｏ３ 衬底上生长的 Ｇａ Ａｓ 单晶薄膜具有与单晶体材料相似的禁带与光学特性，在带间跃迁的弛豫上，外延薄膜相对体材料大了约５ 倍．
Reported GaAs semiconductor single crystal thin films of zinc blende structure grown by molecular beam epitaxy on a perovskite SrTiO3 substrate. The band gap transition of GaAs thin films was investigated by using light modulation reflectance spectroscopy and photo-fluorescence spectroscopy, and compared with the usual GaAs material properties. The results show that GaAs single crystal films grown on the perovskite-type SrTiO3 substrate exhibit similar bandgap and optical properties as those of single-crystal materials, About 5 times.