A GaN AlGaN InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED

• 作 者: 杨斌 郭志友 解楠 张盼君 李婧 李方正 林宏 郑欢 蔡金鑫
• 机 构: Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials a
• 出 处: Chinese Physics B
• 发表日期: 2014年04期
• 关键词: AlGaN recombination confinement attributed leakage specially multilayer illumina

The advantages of a GaN–AlGaN–InGaN last quantum barrier(LQB) in an InGaN-based blue light-emitting diode are analyzed via numerical simulation. We found an improved light output power, lower current leakage, higher recombination rate, and less efficiency droop compared with conventional GaN LQBs. These improvements in the electrical and optical characteristics are attributed mainly to the specially designed GaN–AlGaN–InGaN LQB, which enhances electron confinement and improves hole injection efficiency.

The advantages of a GaN-AlGaN-InGaN last quantum barrier (LQB) in an InGaN-based blue light-emitting diode are analyzed via numerical simulation. We found an improved light output power, lower current leakage, higher recombination rate, and less efficiency These improvements in the electrical and optical characteristics are attributed primarily to specifically designed GaN-AlGaN-InGaN LQB, which enhances electron confinement and improves hole injection efficiency.