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Operation of 808-nm laser diode pumping at elevated temperature is crucial to many applications. Reliable operation at high power is limited by high thermal load and low catastrophic optical mirror damage (COMD) threshold at elevated temperature range. We demonstrated high efficiency and high power operation at elevated temperature with high COMD power. These results were achieved through device design optimization such as growth conditions, doping profile, and materials composition of the quantum-well and other layers. Electrical-to-optical efficiency as high as 62% was obtained through lowered threshold current, lowered series resistance and increased slope efficiency. The performance of single broad-area laser diodes scales to that of high power single bars on water-cooled copper micro-channel heatsinks or eonductively-cooled CS heatsinks. No reduction in bar performance or significant spectral broadening is seen when these micro-channel coolers are assembled into 6-bar and 18-bar CW stacks for the h
Operation of 808-nm laser diode pumping at elevated temperature is crucial to many applications. Reliable operation at high power is limited by high thermal load and low catastrophic optical mirror damage (COMD) threshold at elevated temperature range. We demonstrated high efficiency and high power operation at elevated temperature with high COMD power. These results were achieved through device design optimization such as growth conditions, doping profile, and materials composition of the quantum-well and other layers. Electrical-to-optical efficiency as high as 62% was obtained through lower threshold current, lowered series resistance and increased slope efficiency. The performance of single broad-area laser diodes scales to that of high power single bars on water-cooled copper micro-channel heatsinks or eonductively-cooled CS heatsinks. No reduction in bar performance or significant spectral broadening is seen when these micro-channel coolers are assembled into 6-bar and 18-bar C W stacks for the h