论文部分内容阅读
本文在600℃对6H-SiC进行了He~+辐照实验,离子辐照能量为100 keV,剂量为5×10~(15)ions·cm~(-2)、1×10~(16)ions.cm~(-2)、3×10~(16)ions.cm~(-2)和8×10~(16)ions·cm~(-2)。本文采用多模式扫描探针显微镜技术,包括轻敲模式原子力显微镜、纳米压痕/划痕和导电模式原子力显微镜技术对样品辐照前后的表面损伤进行了分析。结果表明,随辐照剂量的增加,样品表面粗糙度逐渐增加,表面硬度逐渐下降。导电模式原子力显微镜能清晰地观测到样品表面氮泡分布形态,进一步说明材料表面的肿胀是由材料内部高压氮泡产生的。
In this paper, the He ~ + irradiation experiments on 6H-SiC were carried out at 600 ℃, the ionization energy was 100 keV, the dose was 5 × 10-15 ions · cm -2, 1 × 10-16, ions.cm ~ (-2), 3 × 10 ~ (16) ions.cm -2 and 8 × 10 ~ (16) ions cm -2. In this paper, multi-mode scanning probe microscopy techniques including tapping mode atomic force microscopy, nanoindentation / scratch and conductive mode AFM were used to analyze the surface damage before and after irradiation. The results showed that with the increase of irradiation dose, the surface roughness increased gradually and the surface hardness decreased gradually. Conductive pattern atomic force microscopy can clearly observe the sample surface nitrogen bubble distribution morphology, and further shows that the swelling of the material surface is generated by the material inside the high pressure nitrogen bubble.