Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor opt

• 作 者: 汪寒超 黄黎蓉 石忠卫
• 机 构: Wuhan National Laboratory for Optoelectronics,College of Opto-Electronics Science & Engineering,Huaz
• 出 处: 半导体学报
• 发表日期: 2011年06期
• 关键词: amplifier spontaneous insulating insensitive FWHM etching waveguide length satur

A two-electrode multi-quantum-well semiconductor optical amplifier is designed and fabricated.The amplified spontaneous emission(ASE)spectrum and gain were measured and analyzed.It is shown that the ASE spectrum and gain characteristic are greatly influenced by the distribution of the injection current density.By changing the injection current density of two electrodes,the full width at half maximum,peak wavelength,peak power of the ASE spectrum and the gain characteristic can be easily controlled.

A two-electrode multi-quantum-well semiconductor optical amplifier is designed and fabricated. Amplified spontaneous emission (ASE) spectrum and gain were measured and analyzed. It is shown as the ASE spectrum and gain characteristic are greatly influenced by the distribution of the. injection current density.By changing the injection current density of two electrodes, the full width at half maximum, peak wavelength, peak power of the ASE spectrum and the gain characteristic can be easily controlled.