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本文对离子束辅助磁控溅射低温沉积的ITO薄膜进行了研究,重点考察了辅助离子束能量对ITO薄膜的光电性能和晶体结构的影响。结果表明:当A r/O2辅助离子束能量为900 eV左右时能够有效改善ITO薄膜的光电性能,在从非晶到多晶的转变过程中ITO薄膜具有较低的电阻率。在聚碳酸酯(PC)基片上制备了平均可见光透过率81.0%、电阻率为5.668×10-4ohm cm、结构致密且附着力良好的ITO薄膜,基片无变形。
In this paper, ion-beam assisted magnetron sputtering deposited at low temperature ITO thin films were studied, focusing on the auxiliary ion beam energy on the ITO film optical properties and crystal structure. The results show that when the energy of A r / O2 assisted ion beam is about 900 eV, the photoelectric properties of ITO films can be effectively improved. The ITO films have lower resistivity during the transition from amorphous to polycrystalline. An ITO film with an average visible light transmittance of 81.0% and a specific resistivity of 5.668 × 10 -4 ohm cm was obtained on a polycarbonate (PC) substrate with a dense structure and good adhesion without deformation.