High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and th

• 作 者: 高涛 徐锐敏 张凯 孔月婵 周建军 孔岑 郁鑫鑫 董迅 陈堂胜
• 机 构: Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UES
• 出 处: Journal of Semiconductors
• 发表日期: 2016年06期
• 关键词: AlGaN stack dielectric implantation drain scaled etching nitride fluorine balanc

We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors(MOS-HEMTs) by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_(1-x)O_3/Al_2O_3 stack(x≈0.33) grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier layer.Fabricated enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique,delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/mm.The balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications.

We present high-performance enhancement-mode AlGaN / GaN metal-oxide-semiconductor highelectron mobility transistors (MOS-HEMTs) by a fluorinated gate dielectric technique. A nanolaminate of an Al 2 O 3 / La_xAl_ (1-x) O_3 / Al_2O_3 stack 0.33) grown by atomic layer deposition is employed to avoid the implantation of fluorine ions into the scaled barrier layer. Fabricated enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique, delivering a large maximum drain current of 916 mA / mm and simultaneously a high peak transconductance of 342 mS / mm. The balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ion implantation have a great potential for high speed GaN E / D-mode integrated circuit applications.