论文部分内容阅读
采用不同能量密度、脉冲数的248nm准分子激光对表面为p型的GaN外延片进行辐照,再对样品进行退火处理。对激光辐照前后以及退火前后的样品进行光致发光、阴极射线谱、X射线光电子谱、霍尔效应、I-V曲线等表征。实验结果表明:激光辐照和N2气氛下退火相结合可以使GaN外延片的电学和发光性能均较辐照前有不同程度的提高。将改性后的GaN外延片封装成发光二极管(LED)器件,研究了其发光性能与激光辐照能量密度和退火气氛的关系。改性后的GaN基LED器件的发光强度最高可增加约37%,说明GaN外延片电学和发光性能的改善将直接影响其封装成LED器件后的发光性能,这对于提高GaN基LED的性能有重要意义。
The 248nm excimer laser with different energy density and pulse number was used to irradiate the p-type GaN epitaxial wafer on the surface, and the samples were annealed. The samples before and after laser irradiation and before and after annealing were characterized by photoluminescence, cathodic ray spectrum, X-ray photoelectron spectroscopy, Hall effect and I-V curve. The experimental results show that the combination of laser irradiation and annealing in N2 atmosphere can increase the electrical and luminescent properties of GaN epitaxial wafers to some extent before irradiation. The modified GaN epitaxial wafers were encapsulated into light-emitting diode (LED) devices and the relationship between their luminescent properties and laser irradiation energy density and annealing atmosphere was studied. The luminescence intensity of the modified GaN-based LED device can be increased by up to 37%, indicating that the improvement of the electrical and luminescent properties of the GaN epitaxial wafer will directly affect the luminescent properties after encapsulation into LED devices, Significance.