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基于XFAB 0.6μm CMOS工艺,设计了一种具有大电流驱动能力的低温度系数带隙基准电压源。通过设置不同温度系数的电阻的比值,实现带隙基准的2阶曲率补偿。采用新的电路结构,使基准源具有驱动10 m A以上负载电流的能力。经过Hspice仿真验证,常温基准输出电压为2.496 V,-55℃～125℃温度范围内的温度系数是3.1×10~(-6)/℃;低频时,电源电压抑制比为-77.6 d B;供电电压在4～6 V范围内,基准输出电压的线性调整率为0.005%/V;负载电流在0～10m A范围内,基准输出电压波动为219μV,电流源负载调整率为0.022 m V/m A。
Based on XFAB 0.6μm CMOS technology, a low temperature coefficient bandgap voltage reference with high current driving capability was designed. By setting the ratio of the resistors with different temperature coefficients, the second-order band-gap curvature compensation can be realized. The new circuit structure allows the reference to drive loads above 10 mA. After Hspice simulation, the output voltage at room temperature is 2.496 V, the temperature coefficient in the temperature range of -55 ℃ ~ 125 ℃ is 3.1 × 10 -6 / ℃, and the rejection ratio of power supply is -77.6 d B at low frequency. The linear regulation of the reference output voltage is 0.005% / V in the range of 4 ~ 6 V; the load current is in the range of 0 ~ 10 m A, the reference output voltage fluctuation is 219μV, the current source load regulation is 0.022 mV / m A.