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硅材料与氢的相互作用是影响其结构完整性的重要方面. 高分辨电子显微术被用于研究注氢硅片高温退火时形成的二次缺陷. 实验发现高温退火如低温退火处理一样会导致(111)注氢硅片中出现裂纹, 但不同之处在于裂纹的下部还有大量的位错发射, 而且有些裂纹并未完全裂开, 表现为非晶带. 另外, 高温退火还导致空腔的出现, 空腔呈截角八面体形状, 以{111}和{100}面为内表面, 可以有非晶状的内壁. 空腔平行于正表面成串状排布. 空腔间有位错带与之相连.
The interaction between silicon and hydrogen is an important aspect that affects its structural integrity .High-resolution electron microscopy was used to study the secondary defects formed during the high temperature annealing of hydrogen injection wafers. It was found that high temperature annealing, like low temperature annealing, Resulting in cracks in the (111) hydrogen-implanted silicon wafer, except that a large amount of dislocation emission was also observed in the lower part of the crack, and some of the cracks did not completely crack and showed an amorphous zone. In addition, high- The appearance of the cavity, the cavity is truncated octahedron shape, with {111} and {100} surface as the inner surface, there may be non-crystalline wall. Cavities parallel to the front surface of a series arrangement. Dislocation belt connected with it.