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本篇论文论述一种新近发展起来的、具有浅平P阱(SFPW)结构的图象传感元,进而提及使用1.69cm(2/3英寸)光学制式的490×510元和580×500元器件时应用这种结构的情况。在成象区里的结构由浅平P阱构成,它不仅可结合光电二极管以抑制图象起晕,而且还可结合CCD移位寄存器以减轻图象弥散,同时由于SFPW结构结合了无转移栅(TGL)结构和时钟线隔离光电二极管结构,进一步得到令人满意的特性。譬如(一)高分辨率,(二)高孔径比,(三)低弥散电平。在这里常规的n~+-P光电二极管由n~+-n～- -p结构所替代,其中n~-区的功用是作为溢流通道,将光学过载产生的过量电荷引向衬底,同时也可用来维持中波段的灵敏度。这两种图象传感器均有超出370行电视扫描线的水平分辨率,大于32％的孔径比和低于-70dB的弥散电平。
This paper discusses a newly developed picture sensing element with a shallow planar P-well (SFPW) structure, and further mentions 490 × 510 elements and 580 × 500 using a 1.69 cm (2/3 inch) optical format Components of the application of this structure. The structure in the imaging zone consists of a shallow planar P-well that combines photodiodes to suppress image fainting and can also incorporate a CCD shift register to reduce image dispersion while combining the SFPW structure with a transferless gate TGL) structure and the clock line to isolate the photodiode structure, further satisfactory characteristics. For example (a) high resolution, (b) high aperture ratio, (c) low dispersion level. Here the conventional n ~ + -P photodiode is replaced by an n ~ + -n ~ - -p structure, in which the n ~ ~ region serves as an overflow channel, leading the excess charge generated by the optical overload to the substrate, It is also used to maintain the mid-band sensitivity. Both of these image sensors have horizontal resolution beyond the 370-line television scanning lines, aperture ratios greater than 32%, and dispersion levels below -70dB.