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实现了一种可以对于反射系数进行精确建模的半导体激光器电路模型并且与传统模型进行了比较。在ADS(Advanced Design Systems)中使用了SDD(Symbolic Defined Devices)器件实现,对于速率方程进行了变形以改进模型的收敛性,该模型可用于大信号仿真。对于不同偏置条件下的半导体激光器的反射系数进行了仿真并且和测量结果进行了对比。首次在大信号仿真中验证了改进模型的精确性。
A semiconductor laser circuit model that accurately models the reflection coefficient is realized and compared with the conventional model. In ADS (Advanced Design Systems), SDD (Symbolic Defined Devices) device implementation was used. The rate equation was modified to improve the convergence of the model, which can be used for large signal simulation. The reflection coefficients of semiconductor lasers under different bias conditions were simulated and compared with the measured results. For the first time in large signal simulation to verify the accuracy of the improved model.