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本文报导了一种非破坏性无毒、无污染、重复性好的MOS结构新型电极。可用平衡态C-V、准静态C-V和瞬态C-t测试、温—偏处理等工艺监控及界面特性研究。
This paper reports a non-destructive non-toxic, non-polluting, repeatable MOS structure of the new electrode. Can be used equilibrium C-V, quasi-static C-V and transient C-t test, temperature - partial treatment process monitoring and interface characteristics of the study.