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本文论及到一种新的高温超小型压力传感器的设计和研制,特别是其中的固态工艺可把这种传感器的使用温度范围扩展到P-N结以上。本文还对P-N结的基本温度范围及其它先进的隔离工艺进行了评论。下面将详细讨论三种不同的工艺方法。1.用不透明的低温焊料玻璃来实现半导体敏感元件与金属传感器组件之间的粘接。2.用静电封装技术来实现半导体敏感元件与传感器的玻璃组件之间的封接。3.用外延淀积法制造集成隔离固态敏感元件。用以上三种技术使传感器的使用温度达到或超过600°F(315.5℃) 文章对以上三种技术的优缺点进行了讨论并指出工艺技术与设计之间的关系。
This article addresses the design and development of a new high-temperature ultra-small pressure sensor. In particular, the solid-state process extends the temperature range of this sensor to above the P-N junction. This article also comments on the basic temperature range of P-N junctions and other advanced isolation processes. The following will discuss in detail three different process methods. 1. The use of opaque low-temperature solder glass to achieve the semiconductor sensor and the metal sensor assembly between the bonding. 2. Electrostatic packaging technology to achieve semiconductor sensor and sensor glass between the seal. 3. Using epitaxial deposition to manufacture integrated isolated solid-state sensitive components. The above three techniques have enabled sensors to operate at or above 600 ° F (315.5 ° C). The paper discusses the advantages and disadvantages of the three techniques and points out the relationship between process technology and design.