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报道了一种以InGaAsP(阱)/InGaAlAs(垒)量子阱为有源区的1.31μmTM偏振高速激光器。以1%张应变的In_(0.49)Ga_(0.51)As_(0.79)P_(0.21)作为阱层,0.5%压应变的InGaAlAs作为垒层,计算了由不同势垒带隙(1.309、1.232、1.177、1.136、1.040 eV)构成的五种多量子阱的发光特性,和由其构成的激光器的器件特性。数值模拟分析表明,采用适度小的势垒带隙,既能将载流子有效限制在有源区,又可以得到载流子在量子阱间的均匀分布,从而改善量子阱的发光特性和激光器的性能参数。该仿真对研制低阈值电流、高特征温度和大调制带宽的InGaAsP/InGaAlAs应变补偿量子阱激光器具有指导意义。
A 1.31μm high-speed polarization laser with an InGaAsP (well) / InGaAlAs (quantum well) quantum well as an active region is reported. A series of InGaAsAs doped with 1% strain of In 0.49 Ga 0.51 As 0.79 P 0.21 as well layers and 0.5% compressively InGaAlAs as barrier layers were calculated by different barrier band gaps (1.309, 1.232, 1.177 , 1.136, 1.040 eV), and the device characteristics of the laser made up of these. Numerical simulation shows that using a modest barrier band gap can effectively limit the carrier in the active region and obtain uniform distribution of carriers in the quantum well so as to improve the light emitting characteristics of the quantum well and the laser Performance parameters. The simulation is instructive for the development of InGaAsP / InGaAlAs strain compensated quantum well lasers with low threshold current, high characteristic temperature and large modulation bandwidth.