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在InP基异质结InGaAsP多量子阱(MQW)结构上溅射Cu/SiO2复合层,开展了量子阱混杂(QWI)材料的实验研究。经快速退火(RTA),实现了比常规无杂质空位扩散(IFVD)方法更大的带隙波长蓝移量。在750℃、200s的退火条件下,获得最大172nm的波长蓝移;通过改变退火条件,可实现不同程度的蓝移,满足光子集成技术中不同器件对带隙波长的需求。为了验证其用于光子集成领域的可行性,利用混杂技术分别制备了宽条激光器和单片集成电吸收调制激光器(EML)。在675℃退火温度,80s、120s和200s的退火时间下分别实现了61、81和98nm的波长蓝移;并且,相应的宽条激光器的电激射光(EL)谱偏调量与其材料的光致荧光(PL)谱偏调量基本一致。在675℃、120s退火条件下,制备的EML集成器件中,电吸收调制器(EAM)和分布反馈(DFB)激光器区的蓝移量分别83nm和23.7nm,相对带隙差为59.3nm。EML集成器件在激光器注入电流为100mA、调制器零偏压时出光功率达到9.6mW;EAM施加-5V反向偏压时静态消光比达16.4dB。
The Cu / SiO2 composite layer was sputtered on the InPAs heterostructure InGaAsP multiple quantum well (MQW) structure and the quantum well hybrid (QWI) materials were investigated. The rapid blue annealing (RTA) results in a larger bandgap wavelength blue-shift than the conventional impurity-free interstitial diffusion (IFVD) method. Under the condition of 750 ℃ and 200s, the maximum blue shift of wavelength of 172nm can be obtained. By changing the annealing conditions, the blue shift can be realized to meet the bandgap wavelength requirement of different devices in photon integration technology. In order to verify its feasibility for the field of photonic integration, a wide-band laser and a monolithically integrated absorption-modulated laser (EML) were prepared by using hybrid techniques. Wavelength blue shifts of 61, 81 and 98 nm were achieved at an annealing temperature of 675 ° C., an annealing time of 80 s, 120 s and 200 s, respectively; and the corresponding EL laser spectrum of the wide-band laser was shifted from the light of its material Induced Fluorescence (PL) spectral deviation is basically the same. The blue shift of the EAM and DFB laser were 83nm and 23.7nm, respectively, with a relative band gap of 59.3nm at 675 ℃ and 120s annealing conditions. The EML integrated device achieves a power output of 9.6mW at a laser injection current of 100mA and a zero bias of the modulator, and a static extinction ratio of 16.4dB when the EAM is applied with a -5V reverse bias.