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研究了衬底温度（Ｔｓ）从室温至６２３Ｋ生长的氢化非晶硅（ａ—Ｓｉ：Ｈ）的光电导的温度依赖关系，首次发现了出现光电导的热淬灭（ＴＱ）的温度区随ａ—Ｓｉ：Ｈ的Ｔｓ的降低系统地移向较低温度区．分析了ａ—Ｓｉ：Ｈ中这种新现象与费米能级位置以及能隙中缺陷态密度分布的关系．
The temperature dependence of photoconductivity of hydrogenated amorphous silicon (a-Si: H) grown from room temperature to 623K was studied. It was found for the first time that the temperature region of thermal quenching (TQ) of photoconductors Ts of a-Si: H decreases systematically toward lower temperature zones. The relationship between the new phenomenon in a-Si: H and the position of the Fermi level and the density distribution of defect states in the energy gap is analyzed.