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超高真空条件下,在Si(100)衬底上相间蒸镀稀土金属铈(200埃)和硅(200埃)薄膜,形成多层膜结构,并对其进行恒温炉退火和红外快速退火处理。然后利用AES、RBS、XRD和TEM等分析技术对所得各样品进行分析,发现Ce-Si多层膜在150℃的低温下经2小时退火即可发生反应,形成混合层。随着退火温度从150℃上升,CeSi_2逐步形成,并在300—400℃之间完全反应。经RBS确定的化学配比为CeSi_(～1.73)。在150—400℃ CeSi,的形成过程中,选区衍射分析发现,在低温时薄膜中有些区域就存在小晶粒,但直到900℃10秒退火后,薄膜也只是多晶,而并未发现单晶外延迹象。
Under ultrahigh vacuum conditions, rare earth metal cerium (200 angstroms) and silicon (200 angstroms) films were deposited on Si (100) substrates alternately to form a multilayered film structure, which was subjected to a constant temperature furnace annealing and an infrared rapid annealing . The samples were analyzed by AES, RBS, XRD and TEM. The results showed that Ce-Si multilayers could react at low temperature of 150 ℃ for 2 hours to form a mixed layer. With the annealing temperature rising from 150 ℃, CeSi_2 gradually formed, and fully reacted between 300-400 ℃. The chemical composition determined by RBS is CeSi_ (~ 1.73). During the formation of CeSi at 150-400 ℃, the selected area diffraction analysis shows that there are some small grains in some areas of the film at low temperature, but the film is only polycrystalline after annealed at 900 ℃ for 10 seconds and no single Crystal epitaxial signs.