Optimum design of photoresist thickness for 90-nm critical dimension based on ArF laser lithography

• 作 者: 陈德良 曹益平 黄振芬 卢熙 翟爱平
• 机 构: Department of Opto-Electronics,Sichuan University,
• 出 处: Chinese Physics B
• 发表日期: 2012年08期
• 关键词: lithography swing resist technological manufacture reflectivity normalized SPIE

In this work,a 90-nm critical dimension(CD) technological process in an ArF laser lithography system is simulated,and the swing curves of the CD linewidth changing with photoresist thickness are obtained in the absence and presence of bottom antireflection coating(BARC).By analysing the simulation result,it can be found that in the absence of BARC the CD swing curve effect is much bigger than that in the presence of BARC.So,the BARC should be needed for the 90-nm CD manufacture.The optimum resist thickness for 90-nm CD in the presence of BARC is obtained,and the optimizing process in this work can be used for reference in practice.

In this work, a 90-nm critical dimension (CD) technological process in an ArF laser lithography system is simulated, and the swing curves of the CD linewidth changing with photoresist thickness are obtained in the absence and presence of a bottom antireflection coating (BARC) .By analysing the simulation result, it can be found that in the absence of BARC the CD swing curve effect is much bigger than that in the presence of BARC.So, the BARC should be needed for the 90-nm CD manufacture. The resist thickness for 90-nm CD in the presence of BARC is obtained, and the optimizing process in this work can be used for reference in practice.