论文部分内容阅读
两种低成本,能适用于任何实际拉晶机械装置的简易压力室已经制成。它们被设计成能工作在最高温度1300℃、最大压力1000磅/英寸~2,利用输出功率为10千瓦的高频炉作为功率源,用普通的钢瓶氮气作为压力源。较小的工作室可容纳熔料3～6厘米~3,较大的中型工作室可容纳熔料15～25厘米~3。文中给出了结构的细节。迄今已生长出磷化铟和砷化镓单晶。这种压力室为验证液封切克劳斯基法生长由一种或几种挥发性元素组成的化合物的可行性,提供了一种成本低、快速探索的方法。文中还报导了ZnGeP_2和CuInS_2化合物的结果。
Two low-cost, simple pressure chambers that are suitable for any actual crystal pulling mechanism have been made. They are designed to operate at a maximum temperature of 1300 ° C and a maximum pressure of 1000 psi, using a high-frequency furnace with an output of 10 kW as the power source and an ordinary cylinder of nitrogen as the pressure source. Smaller studio can accommodate 3 ~ 6 cm ~ 3 melt, the larger medium-sized studio can hold 15 ~ 25 cm ~ 3 melt. The text gives the details of the structure. To date, indium phosphide and gallium arsenide single crystals have been grown. This pressure chamber provides a cost-effective and rapid method of testing for the feasibility of liquid-encapsulated Czochralski method for the growth of compounds composed of one or several volatile elements. The article also reported the results of ZnGeP_2 and CuInS_2 compounds.