Role of gallium wetting layer in high-quality ZnO growth on sapphire (0001) substrates

• 作 者: ZENG Zhaoquan WANG Yong DU Xia
• 机 构: StateKeyLaboratoryforSurfacePhysics,CollegeofPhysicsandEngineering,BeijingUniversityofTechnology
• 出 处: 中国科学：物理学、力学、天文学英文版
• 发表日期: 2004年5期
• 关键词: Ga WETTING layer sapphire polarity defect density zinc oxide rf-MBE RHEED
• 基金项目: The authors would like to thank Prof. Zhou Junming for the technical assistance. This work was supported by the National Natural Science Foundation of China (Grant Nos. 60376004, 10174089, and 6002140

A Ga wetting layer was used to modify the surface structure of sapphire (0001) substrate to prepare high-quality ZnO film by radio frequency plasma-assisted molecule beam epitaxy. We found that this Ga layer plays a crucial role in eliminating 30( rotatio