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用金属有机化学气相淀积技术在蓝宝石衬底上成功外延了高P组分的GaN1-xPx 三元合金 .俄歇电子能谱深度剖面结果表明在GaN1-xPx 中P的掺入量最高达到 2 0 %且分布均匀 ;X射线光电子能谱价态分析证实了外延层中Ga—P键的存在 .对不同P组分的GaN1-xPx 样品进行了低温光致发光 (PL)测试 ,与来自GaN衬底的带边发射相比 ,随三元合金中P组分的变化 ,GaN1-xPx 的PL峰呈现出了不同程度的红移 .在GaN1-xPx 的PL谱中没有观测到有关GaP的发射峰 ,表明该合金材料没有发生相分离 .
The high p-component GaN1-xPx ternary alloy was successfully epitaxially grown on a sapphire substrate by a metal-organic chemical vapor deposition technique.The results of Auger electron spectroscopy depth profiles show that the incorporation of P in GaN1-xPx reaches up to 2 0% and distributed uniformly. The valence state analysis of X-ray photoelectron spectroscopy confirmed the existence of Ga-P bond in the epitaxial layer. Low-temperature photoluminescence (PL) test was performed on GaN1-xPx samples with different P components, Compared with the band edge emission of the substrate, the PL peak of GaN1-xPx shows some degree of redshift with the change of P component in the ternary alloy. The emission of GaP is not observed in the PL spectrum of GaN1-xPx Peak, indicating no phase separation of the alloy material.