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本文提出了一种新颖的电容耦合式两相电荷耦合器件。介绍了利用处于电浮置的耦合电容分压而获得非对称势阱的理论计算方法和结果。利用电容耦合原理制成了一个64位表面N沟道两相CCD图象传感器,该器件在0.8M_(HZ)频率下工作时,转移效率可达99.96%,电荷处理能力高于3×10~(11)个电子/cm~2。实际测量的电容分压与理论计算相符。对实验结果进行了讨论。
This paper presents a novel capacitively coupled two-phase charge-coupled device. The theoretical calculation method and result of asymmetric potential well using the partial pressure of the coupling capacitor in electric floating are introduced. A 64-bit surface N-channel two-phase CCD image sensor is fabricated by the principle of capacitive coupling. When the device operates at a frequency of 0.8M_ (HZ), the transfer efficiency can reach 99.96% and the charge handling capability is higher than 3 × 10 ~ (11) electrons / cm ~ 2. The actually measured capacitance partial pressure is in line with the theoretical calculation. The experimental results are discussed.