【摘 要】
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The effects of thermal annealing on oxygen behavior and carrier lifetimes of mc-Si wafers were investigated by means of FTIR and QSSPCD during single step and t
【机 构】
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Institute of Information Function Materials,Beijing Solar Energy Research Institute
论文部分内容阅读
The effects of thermal annealing on oxygen behavior and carrier lifetimes of mc-Si wafers were investigated by means of FTIR and QSSPCD during single step and two step heat treatments in N2 and O2 ambient. It reveals that interstitial oxygen concentration of mc-Si and CZ-Si has a slighter decrease in N2 and O2 ambient during single-step annealing, which means oxygen precipitates are not generated. But oxygen concentration greatly decreases and generates a number of oxygen precipitates during two-step annealing. Bulk lifetime of mc-Si increases in N2 ambient at 850, 950, 1150 ℃ respectively, and annealing in O2 shows better results than that in N2 and annealing in two-step reflected better consequence than annealing in single-step. But lifetime of CZ-Si annealed in N2 or O2 decreases rapidly. The reason of lifetime increase is probably considered due to the fact that interstitial Si atoms of Si/SiO2 interface fill vacancies or some recombination centers at high temperature annealing. Moreover, a number of impurities in mc-Si probably diffuse to grain boundaries so that greatly reduce recombination centers result to lifetime rising.
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