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近年来随着科技发展,一氧化硅作为一种半导体光学材料得到了广泛的应用,其生产过程中产生的杂质会影响一氧化硅的品质,造成应用效果不佳,因此检测一氧化硅中杂质元素的含量具有重要意义。本文通过挥硅法建立电感耦合等离子体原子发射光谱法测定一氧化硅中杂质元素的方法,实验结果表明该方法精密度高,准确度好,检出限低,能快速准确检测杂质元素的含量,应用于实际样品的检测取得了满意的结果。
In recent years, with the development of science and technology, silicon monoxide has been widely used as a kind of semiconductor optical material. The impurities produced in its production process will affect the quality of silicon monoxide, resulting in poor application effect. Therefore, the detection of impurities in silicon monoxide The content of the elements is of great importance. In this paper, the method of determining the impurity elements in silicon monoxide by Inductively Coupled Plasma-Atomic Emission Spectrometry was established by swinging silicon method. The experimental results show that the method has high precision, good accuracy and low detection limit, which can quickly and accurately detect the content of impurity elements , Used in the actual sample testing obtained satisfactory results.