【摘 要】
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Arsenic doped p-type ZnO films were grown on n-type silicon substrates using the GaAs interlayer doping method.Under our growth conditions the main doping eleme
【机 构】
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School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024“,”St
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Arsenic doped p-type ZnO films were grown on n-type silicon substrates using the GaAs interlayer doping method.Under our growth conditions the main doping element is arsenic,which was confirmed by x-ray photoelectroscopy.X-ray diffraction measurements revealed that the p-ZnO:As film was still in the (002) preferred orientation.The Hall test showed that the hole concentration of the p-ZnO:As film was 2.6 × 1017 cm-3.The acceptor level was located at 135 meV above the valance band maximum,according to the low-temperature photoluminescence results.We then fabricated a p-ZnO:As/n-Si hetero junction light-emitting device.Its current-voltage curve showed the typical rectifying behavior of a p-n diode.At forward current injections,the electroluminescence peaks,which cover the ultraviolet-to-visible region,could be clearly detected.ZnO is a Ⅱ-Ⅵ compound semiconductor with a wide direct gap (3.37eV) and a high exciton binding energy (60meV).It has been studied as the candidate material for ultraviolet (UV) light emitting devices (LEDs).Many methods have been used to prepare ZnO films.[1,2] Among them,the metal organic chemical vapor deposition (MOCVD) method has its own excellent advantages in industrial applications.Today,the preparation of p-ZnO is still a challenge.
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