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报道了在采用 L PCVD法制备的富硅 Si Nx 膜中发现的部分晶化的硅镶嵌微结构 .视生长条件和工艺不同 ,该结构的尺度范围从数十到几百纳米不等 .利用不同条件下生长的 Si Nx 膜的应力测试结果和透射电镜观测结果 ,分析了富硅型 Si Nx 膜的微结构的成因及其与膜内应力之间的相互影响 ,对富硅型 Si Nx 膜的 L PCVD生长工艺进行优化 ,大大降低了膜的张应力 ,无支撑成膜面积可达 4 0 m m× 4 0 mm.通过这一研究结果 ,实现了 L PCVD可控制生长确定张应力的 Si Nx 膜
Reported the partially crystallized silicon mosaic microstructure found in silicon-rich Si Nx films prepared by L PCVD, which range in size from tens to hundreds of nanometers, depending on the growth conditions and the process Si Nx film grown under the conditions of the stress test results and transmission electron microscopy observations, the silicon-rich Si Nx film microstructure causes and the interaction between the film stress, the silicon-rich Si Nx film L PCVD growth process, the tensile stress of the film is greatly reduced, and the unsupported film formation area is up to 40 mm × 40 mm.Through this research result, L PCVD can be controlled to grow and determine the tensile stress of Si Nx film