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讨论了含Mn,Mn和Al,Al或Cl的硒化锌单晶制成的肖特基二极管的场致发光性质。这种二极管在反向偏压下发射一种宽度可变的黄色谱带,其峰值波长在5785(2.14 ev)和6050A之间。从ZnSe:Mn二极管得到的最佳发射在1.9×10~(-3)％的能量效率下亮度为500呎朗伯。在较低的300呎朗伯亮度时得到 3×10~(-3)％的最高效率。在反向偏压下ZnSe:Mn二极管呈现出特征锰发射的窄带,其中心位于5785A。像Al那种外部施主的存在将使亮度和效率降低。这个连同发射向长波的轻微漂移和发射带的加宽一起与自激活发射的起始激发相联系,而自激活发射随施主含量的增加而增加。发现ZnSe:Al场致发光中的自激活发射在6300A(1.97ev),而ZnSe:Cl中为5900A(2.1ev)。仅在肖特基接触下含有一较厚(～200A)绝缘层构成的二极管中观测到正向偏压场致发光。正向场致发光在亮度上至少比反向EL低一个数量级。
The electroluminescence properties of Schottky diodes made of ZnSe single crystals containing Mn, Mn and Al, Al or Cl are discussed. This diode emits a variable width yellow band under reverse bias with a peak wavelength between 5785 (2.14 ev) and 6050A. The best emission from the ZnSe: Mn diode is 500 foot labors at an energy efficiency of 1.9 x 10 ~ (-3)%. The highest efficiency of 3x10 ~ (-3)% is obtained at the lower 300-foot Lambertian brightness. The ZnSe: Mn diode exhibits a narrow band of characteristic manganese emission at reverse bias with its center at 5785A. The presence of external donors like Al will reduce the brightness and efficiency. This, along with the slight shift of the emission to long waves and the broadening of the emission band, is linked to the initial excitation of self-activating emission, whereas the self-activating emission increases with increasing donor content. The self-activating emission in ZnSe: Al electroluminescence was found to be 6300 A (1.97 eV) compared to 5900 A (2.1 eV) in ZnSe: Cl. Forward-bias field electroluminescence was observed only in diodes with a thicker (~ 200A) insulating layer under Schottky contact. The forward electroluminescence is at least one order of magnitude lower in brightness than the inverted EL.