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在优化ＹＢＣＯ薄膜的制备工艺和研究双晶结的电流密度Ｊｃ和结的正常态电阻尼Ｒｎ与结宽的关系的基础上，在角度差为２８度的ＹＳＺ双晶基片上设计和制作了双晶结ＤＣＳＱＵＩＤ．双晶结的Ｉ－Ｖ特性基本符合ＲＳＪ模型，结宽为４μｍ的双晶结的正常态电阻Ｒｎ为２．４Ω，在２３．４ＧＨｚ微波辐射场中观察到Ｓｈａｐｒｉｏ微波感应台阶．所研制的结宽为４μｍ的双晶结的ＤＣＳＱＵＩＤ最大电压调制深度为１５μＶ，特征电压ＩｃＲｎ为６７．２μＶ，在１Ｈｚ下磁通噪声为对应频率下磁场灵敏度为１．１ｐＴ／，能量分辨率为１．９７×１０－２８Ｊ／Ｈｚ．
Based on the optimization of the preparation process of YBCO thin films and the study of the relationship between the current density Jc of the twin junction and the normal state resistance junction Rn and junction width of the junction, Crystal junction DCSQUID. The I-V characteristics of the bimorph junction are basically consistent with the RSJ model. The normal state resistance Rn of the bimorph junction with a junction width of 4μm is 2.4Ω, and the Shaprio microwave sensing step is observed in the 23.4GHz microwave radiation field. The developed DCSQUID maximum voltage modulation depth is 15μV and the characteristic voltage IcRn is 67.2μV. The magnetic flux noise at 1Hz is the magnetic field sensitivity at the corresponding frequency of 1.1pT /, the energy resolution is 1.97 × 10-28J / Hz.