Local structure of oxygen-deficient Yttrium oxide

• 作 者: 程学瑞 代海洋 戚泽明 王玉银 张国斌
• 机 构: Department of Technology and Physics,Zhengzhou University of Light Industry,National Synchrotron Rad
• 出 处: Chinese Physics C
• 发表日期: 2013年09期
• 关键词: deficient pulsed orient cubic dielectric length struc octahedral leakage transis

Yttrium oxide thin films have been deposited on Si(100) substrate by using pulsed laser deposition(PLD) method.X-ray difraction(XRD),hard and soft X-ray absorption spectroscopy(XAFS) are employed to investigate the origin of oxygen vacancies and their influence on the structure and atomic distributions.The XRD results indicate that the Y_2O_3 thin films strongly orient the(111) axis of the cubic structure.Analyses on the Y K-edge extended X-ray absorption fine structures reveal that the coordination number of Y atoms decreases and the bond length of Y-O contracts due to the loss of oxygen atoms.The X-ray absorption near edge structure analysis together with a theoretical approach further confirms the oxygen vacancies formation and their possible location.

Yttrium oxide thin films have been deposited on Si (100) substrates by using pulsed laser deposition (PLD) method. X- ray difraction (XRD), hard and soft X-ray absorption spectroscopy vacancies and their influence on the structure and atomic distributions. The XRD results indicate that the Y_2O_3 thin films strongly orient the (111) axis of the cubic structure. An analysis of the Y K-edge extended X-ray absorption fine structures reveals that the coordination number of Y variations decreases and the bond length of YO contracts due to the loss of oxygen atoms. The X-ray absorption near edge structure analysis together with a theoretical approach further confirms the oxygen vacancies formation and their possible location.