【摘 要】
：
Zirconium oxide (ZrO2) thin films are deposited at room temperature by cathodic arc at substrate biases of 0V,-60V and-120V, respectively. The crystal structure
【机 构】
：
College of Science, Changchun University of Science and Technology, Changchun 130022“,” Institute of
论文部分内容阅读
Zirconium oxide (ZrO2) thin films are deposited at room temperature by cathodic arc at substrate biases of 0V,-60V and-120V, respectively. The crystal structure, composition, morphology, and deposition rate of the as-deposited thin films are systematically investigated by x-ray diffraction, x-ray photoelectron spectroscopy (XPS) as well as scanning electron microscopy. The results show that the crystal structure, morphology and deposition rate of the films all are dependant on substrate bias. With the increase of bias voltage from 0 V to-120 V, the zirconium oxide thin film grown on silicon wafer first exhibits monoclinic lattice and tetragonal lattice, further evolves monoclinic phase with the preferred orientation along the (-111) and (-222) directions at-60 V and finally along nearly one observed preferred (002) direction under-120 V. In addition, the variations of morphology with bias voltage are correlated to changes of the 61m structure. The results of XPS demonstrate that Zr elements are almost oxidized completely in the films achieved under-120 V bias.
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