Microstructure and Mechanical Properties of CrN Films Deposited by Inductively Coupled Plasma Enhanc

• 作 者: 刘峰 孟月东 任兆杏 舒兴胜
• 机 构: Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China,
• 出 处: Plasma Science and Technology
• 发表日期: 2008年03期
• 关键词: magnetron sputtering compressive crystalline wafer amorphous nitride inductively

CrN films have been synthesized on Si(100) wafer by inductively coupled plasma(ICP)-enhanced radio frequency (RF) magnetron sputtering.The effects of ICP power on mi-crostructure,crystal orientation,nanohardness and stress of the CrN films have been investigated.With the increase of ICP power,the current density at substrate increases and the films exhibitdenser structure,while the DC self-bias of target and the deposition rate of films decrease.Thefilms change from crystal structure to amorphous structure with the increase of ICP power.Themeasured nanohardness and the compressive stress of films reach the topmost at ICP power of150 W and 200 W,respectively.The mechanical properties of films show strong dependence onthe crystalline structure and the density influenced by the ICP power.

CrN films have been synthesized on Si (100) wafer by inductively coupled plasma (ICP) -enhanced radio frequency (RF) magnetron sputtering. The effects of ICP power on mi-crostructure, crystal orientation, nanohardness and stress of the CrN films have been .With the increase of ICP power, the current density at substrate increases and the film exhibit denser structure, while the DC self-bias of target and the deposition rate of films decrease. of the films change from crystal structure to amorphous structure with the increase of ICP power.Themeasured nanohardness and the compressive stress of films reach the topmost at ICP power of 150 W and 200 W, respectively. the mechanical properties of films show strong dependence on the crystalline structure and the density influenced by the ICP power.