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以玻璃为衬底,利用金属有机化学气相沉积( MOCVD)方法,在360℃附近实现ZnO薄膜的生长。利用ZnO为有源层制备底栅型薄膜晶体管。SiO2被用作栅绝缘材料以有效的抑制漏泄电流的产生,达到氧化锌薄膜晶体管(ZnO-TFT)成功运作目的。ZnO-TFT的电流开关(on/off)比达到104以上。ZnO-TFT在可见光区平均光透过率大约为80 %。以上表明利用ZnO替代传统Si材料作有源层材料制备透明薄膜晶体管是可能的。
Using glass as substrate, the growth of ZnO thin films was achieved at around 360 ℃ by metal organic chemical vapor deposition (MOCVD). Bottom gate thin film transistors are prepared using ZnO as the active layer. SiO2 is used as a gate insulating material to effectively suppress the leakage current and to achieve the successful operation of the ZnO thin film transistor (ZnO-TFT). ZnO-TFT current switch (on / off) ratio of 104 or more. The average light transmittance of ZnO-TFT in the visible region is about 80%. The above shows that the use of ZnO instead of the traditional Si material as the active layer material is possible to prepare transparent thin film transistors.