Effect of FA/O complexing agents and H_2O_2 on chemical mechanical polishing of ruthenium in weakly

• 作 者: 段波 安卫静 周建伟 王帅
• 机 构: Institute of Microelectronics,Hebei University of Technology,
• 出 处: Journal of Semiconductors
• 发表日期: 2004年期
• 关键词: polishing slurry surfactant chelate alkaline roughness probably slowly salts etc

This paper investigated the effect of FA/O and hydrogen peroxide(H2O2/ on ruthenium(Ru) removal rate(RR) and static etching rate(SER). It was revealed that Ru RR and SER first linearly increased then slowly decreaseed with the increasing H2O2 probably due to the formation of uniform Ru oxides on the surface during polishing. Their corrosion behaviors and states of surface oxidation were analyzed. In addition, FA/O could chelate Ru oxides(such as(Ru O4/2 and Ru O4 changed into soluble amine salts [R(NH3/4](Ru O4/2/ and enhance Ru RR. The non-ionic surfactant AD was used to improve the Ru CMP performance. In particular, the addition of AD can lead to significant improvement of the surface roughness.

This was investigated for the effect of FA / O and hydrogen peroxide (H2O2 / on ruthenium (Ru) removal rate (RR) and static etching rate (SER). It was revealed that RR RR and SER first linearly increased then slowly decreased with the increasing H2O2 probably due to the formation of uniform Ru oxides on the surface during polishing. Their corrosion behaviors and states of surface oxidation were analyzed. In addition, FA / O could chelate Ru oxides (such as (Ru O4 / 2 and Ru O4 changed into soluble amine salts [R (NH3 / 4] (Ru O4 / 2 / and enhance Ru RR. The non-ionic surfactant AD was used to improve the Ru CMP performance. In particular, the addition of AD can lead to significant improvement of the surface roughness.