论文部分内容阅读
根据多孔阳极氧化铝 (AAO)薄膜的实验透射谱 ( 2 0 0— 2 5 0 0nm) ,采用极值包络线算法确定其光学常数 ,并由此较精确地计算出AAO薄膜样品在该波段的光学常数 .结果表明 ,多孔氧化铝薄膜表现出直接带隙 (能隙约 4 .5eV)半导体的光学特性 ,且其光学常数与制样中的重要工艺参数阳极氧化电压有显著的相关性 ,即随阳极氧化电压的增加 ,AAO薄膜的厚度、折射率和光学能隙变大 ,消光系数减小 .同时 ,计算得到的薄膜厚度与实测值相吻合 ,则说明计算结果和实验值是自洽的
According to the experimental transmission spectrum (200-250nm) of the porous anodic aluminum oxide (AAO) film, the optical constant was determined by the extremal envelope algorithm, and the AAO film sample was more accurately calculated in this band The results show that the porous alumina film shows the optical properties of a semiconductor with direct band gap (energy gap of about 4.5 eV), and its optical constants have significant correlation with the anodic oxidation voltage, an important process parameter in the sample preparation. That is to say, with the increase of the anodic oxidation voltage, the thickness, refractive index and optical energy gap of the AAO film become larger and the extinction coefficient decreases, and the calculated film thickness agrees with the measured value, indicating that the calculation result and the experimental value are consistent of