论文部分内容阅读
本文介绍了采用离子束1:1接近式印刷曝光机进行二氧化硅(Si0_2)的离子束曝光产生SiO_2图形的方法。不必采用任何聚合物抗蚀剂而直接对SiO_2层进行离子束光刻的方法,可以简化半导体器件和集成光学器件的制作工序,降低器件的制作成本。离子束曝光方法同电子束曝光方法相比的一个显著优点是离子在材料中的散射要比电子在材料中的散射小得多,因而能获得较高的图形分辨率。采用离子束直接对SiO_2进行曝光,由于沿着离子轨迹所造成的照射损伤,SiO_2层被离子束照射区域的腐蚀速度要比未被离 子束照射区域的腐蚀速度显著增大,使得能产生明显的SiO_2台阶,而获得高分辨率的SiO_2图形。 文中介绍了被测量出的SiO_2对于锂离子的灵敏度,并且发现SiO_2对于50—100keV锂离子的灵敏度范围为5×10~(-4)—5×10~(-5)c/cm~2。采用锂离子束曝光和NH_4腐蚀方法,实现了其最终厚度为200—400nm的SiO_2层的微米和亚微米光刻。
This paper presents a method of generating SiO 2 patterns by ion beam exposure of silicon dioxide (SiO 2) using an ion beam 1: 1 proximity printing exposure machine. The method of ion beam lithography directly on the SiO 2 layer without using any polymer resist can simplify the manufacturing process of the semiconductor device and the integrated optical device and reduce the manufacturing cost of the device. A significant advantage of the ion beam exposure method over the electron beam exposure method is that the scattering of ions in the material is much less than the scattering of electrons in the material and therefore allows for higher pattern resolution. The direct exposure to SiO 2 by ion beam can cause the corrosion rate of SiO_2 layer irradiated by ion beam to be significantly higher than that of the region not irradiated by ion beam due to the irradiation damage caused along the ion trajectory, SiO 2 step, and obtain a high-resolution SiO 2 pattern. In this paper, the sensitivities of the measured SiO 2 to lithium ions are introduced and the sensitivity of SiO 2 to 50-100 keV lithium ions is found to be in the range of 5 × 10 -4 -4 × 10 -5 c / cm 2. Lithium ion beam lithography and NH_4 etching were used to fabricate micron and sub-micron photolithography for the SiO_2 layer with the final thickness of 200-400nm.