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传统的紫外线曝光难以制备微桥宽度不超过1微米的双晶约瑟夫森结.我们利用电子束曝光技术制备了纳米级别(几百纳米)桥宽YBa_2Cu_3O_(7-δ)双晶结,具有优良的电流-电压特性和微波响应特性.并分析60K温度下100纳米膜厚的双晶结微桥宽度的变化对结正常态电阻R_N、超导临界电流I_c、特征电压I_cR_N的影响规律.通过考虑结与外部微波电路的阻抗匹配、结检测太赫兹波灵敏度、超导电流大小对高次微波响应台阶影响以及结的特征电压四个因素,得到最佳的太赫兹波检测器中双晶结的微桥宽度为1微米左右.
Conventional ultraviolet exposure makes it difficult to fabricate a bimodal Josephson junction with a micro-bridge width of no more than 1 μm.We prepared a YBa 2 Cu 3 O 7-δ twin junction with a bridge width of nanometers (hundreds of nanometers) using electron beam lithography, Current-voltage characteristics and microwave response characteristics.And the influence of the width of double-crystal junction micro-bridge with 100 nm film thickness on the junction normal state resistance R_N, superconducting critical current I_c and characteristic voltage I_cR_N at 60K temperature is analyzed.According to the results of With the external microwave circuit impedance matching, junction detection terahertz wave sensitivity, the size of the superconducting current response to high-level microwave response to the step and the junction of the characteristic voltage of four factors to get the best terahertz wave detector twin crystal junction micro Bridge width of about 1 micron.