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本文用等温凝固技术研究了Au -In合金在陶瓷封装装片中的应用。结果表明 ,通过一种多层结构设计和机械振动的作用 ,硅芯片可在250oC～300oC、2.1N/mm2 的静态加载压力和流量为0.5l/min的氮气环境下焊接到氧化铝衬底上 ,绝大多数样品的剪切强度符合MILSTD883D美国军方标准 ,焊层具有良好的可靠性 ,在 -55oC～ +125oC之间1750周热循环试验后 ,剪切强度仅有微量下降。同时 ,用金相方法对热循环试验前后的焊层微结构进行了分析。
In this paper, isothermal solidification technique was used to study the application of Au-In alloy in ceramic package. The results show that the silicon chip can be soldered onto the alumina substrate under a static loading pressure of 2.1 N / mm2 and a nitrogen flow rate of 0.5 l / min through a multilayer structure design and mechanical vibration. . The shear strength of most samples meets MILSTD883D US military standards. The weld layer has good reliability. After 1750 cycles of thermal cycling between -55oC and + 125oC, the shear strength decreases only slightly. At the same time, the metallographic method was used to analyze the microstructure of the weld layer before and after the thermal cycling test.