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用高分辨电镜观察了Ｃｕ－Ｚｎ－Ａｌ双程记忆合金中９Ｒ型热弹性马氏体内Ａ：Ｂ型变体对及其界面结构变体Ａ和Ｂ以［０１１］β（即［５９１］９Ｒ）为轴旋转了１８０°，呈Ⅱ类孪晶取向关系Ａ：Ｂ型变体对还具有（１１４）［１１０］９Ｒ，Ａ／／（１１４）［１９２］９Ｒ，Ｂ取向关系，在这一取向下，观察发现堆垛缺陷仅存在于变体Ａ中，变体Ａ与Ｂ以共格界面相匹配，界面为无理指数界面，即Ｋ１（１０．８４２９ ２．５８５９）．界面在原子尺度上大量存在着１—２个原子高度的结构台阶，偶尔存在７—８个原子高度的生长台阶．结构台阶面为（１１４）９Ｒ，台阶梯度方向为［２０１］９Ｒ台阶面与Ｋ１面边线夹角的测量值约为７．３°；接近理论计算值７．４５”．
High-resolution electron microscopy was used to observe the changes of the A: B type and the interfacial structural variants A and B in the 9R thermoelastic martensite in the Cu-Zn-Al two-way memory alloy with [011] β (ie [591] 9R ) Axis is rotated by 180 ° in the direction of the type II twin orientation. The A: B variant pairs also have (9) [110] 9R, A // (114) [192] 9R, Orientation, the observation found that stacking defects only exist in variant A, variant A and B to match the coherent interface, the interface is an irrational index interface, K1 (10.8429 2.5859). There are a large number of structural steps at the atomic scale at the level of 1-2 atoms, and occasional 7-8 atomic height growth steps. The structural step surface is (114) 9R and the step gradient direction is [201]. The measurement of the included angle between the 9R step surface and the edge of the K1 surface is about 7.3 °, which is close to the theoretical calculated value of 7.45 ".