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以太无源光网络(EPON)技术应用广泛,但是要求器件的出纤光功率较高。采用球透镜结合窄发散角芯片的封装方式逐渐成为主流。在有源区为基于Al Ga In As材料体系脊波导结构的1 310 nm法布里-珀罗(FP)半导体激光器中加入模式扩展结构,成功研制出温度特性良好、高效率、窄远场发散角的芯片。室温下芯片的阈值电流与无扩展波导结构的芯片相当,均为10 m A量级;效率达到0.6 m W/m A;远场发散角快轴为23°,慢轴为13°;85℃的阈值电流为20 m A,效率为0.55 m W/m A。该芯片可以使用低成本的晶体管外形(TO)封装技术制成,满足EPON标准的器件。
Ethernet Passive Optical Network (EPON) technology is widely used, but the device requires a higher fiber output power. The ball lens with a narrow divergence angle chip package has gradually become the mainstream. In the 1 310 nm Fabry-Perot (FP) semiconductor laser with AlGaInAs-based ridges and waveguide structures in the active region, a mode-extension structure is added to successfully develop a high-temperature, high-efficiency, narrow- Corner of the chip. The threshold current of the chip at room temperature is comparable to that of a chip without an extended waveguide structure, both of the order of 10 m A; the efficiency reaches 0.6 mW / m A; the far-field divergence angle fast axis is 23 ° and the slow axis is 13 °; The threshold current is 20 m A with an efficiency of 0.55 mW / m A. The chip can be fabricated using low-cost transistor outline (TO) packaging technology to meet EPON standard devices.